News:

T Hong, B Chamlagain et al.,

Anisotropic photocurrent response at black phosphorus–MoS 2 p–n heterojunctions,Nanoscale,                                    

                                                      DOI: 10.1039/C5NR03400K

 

Tu Hong, Bhim Chamlagain, et al.,

Plasmonic hot electron induced photocurrent response at MoS2–metal junctions, ACS Nano,

 

Hsun-Jen Chuang et. al., High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance ContactsNano

Letters 2014 (just accepted ) 

 

Tu Hong, et al., Polarization- and Gate-Dependent Scanning Photocurrent Measurements of Black Phosphorus Field-Effect Transistors Nanoscale(submitted ) 

 

Chamlagain, B. et al, 

Mobility Improvement and Temperature Dependence in Mose2 Field-Effect Transistors on Parylene-C Substrate.

ACS Nano 2014, 10.1021/nn501150r

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Student Spot-light

 

Department of Physics & Astronomy | Wayne State University | (313) 577-2751 | zxzhou@wayne.edu | 135 Physics Bldg. Detroit, MI 48201

Nano Fabrication and Electron Transport Laboratory

 

Physics Department

 

On behalf of the entire group, we would like to welcome you to the official webpage of the Nano Fabrication and Electron Transport Laboratory based in the Physics Department at Wayne state University. We use AFM, SEM, Probe station to characterize the fundamental and technologically relevant electron transport properties of a host of interesting materials. In some cases we design, fabricate, and characterize our own divices, but we also collaborate with colleagues from all over the world to characterize interesting new materials. Please look around and if you have questions feel free to contact any of us to learn more.
 

Sincerely,

Zhou, Zhixian

Sunday, 21 January 1900 00:00
Sunday, 21 January 1900 00:00
Sunday, 21 January 1900 00:00

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